Semiconductor device

ABSTRACT

A semiconductor device is capable of ensuring bonding strength without applying an excessive stress to solder balls and has a high degree of reliability. The semiconductor device includes a substrate made of metal, the substrate having a central portion with a hollow region and a peripheral portion that surrounds the central portion. The central portion of the substrate has a through hole. The semiconductor device also includes a semiconductor chip that is mounted on the central portion of the substrate, and solder balls that are carried on the peripheral portion.

CROSS-REFERENCE TO RELATED APPLICATION

This is a division of application Ser. No. 09/697,282, filed Oct. 27,2000 now U.S. Pat. No. 6,504,245.

BACKGROUND OF THE INVENTION

The present invention relates to a semiconductor device and, inparticular, to the structure of a ball grid array (hereinafter referredto as BGA) package of the cavity down type, taking heat radiation intoaccount.

As a conventional technology in this field, for example, the followingtechnology has been proposed. FIG. 16 is a plan view of a conventionalcavity down type BGA package taking heat radiation into account and FIG.17 is a cross sectional view taken on a line E—E in FIG. 16.

For the purposes of making an electric wiring circuit and taking heatradiation into account, for example, a stepwise drawn substrate 1 madeof a copper plate or the like is prepared, as shown in these drawings.An IC chip 3 is bonded to the drawn portion 1 a of the stepwise drawnsubstrate 1 via an adhesive 2. The electrodes 4 of the IC chip 3 areelectrically connected, or wire-bonded, to the electrodes 5 of thestepwise drawn substrate 1 with metal thin wires 6. Then, a sealingmaterial 7 such as epoxy resin or the like is applied thereto and solderballs 8, which are to be terminals, are bonded like a grid to thesurface 1 b of the substrate by a heating step.

SUMMARY OF THE INVENTION

As is shown in FIG. 18 to FIG. 20, the conventional BGA packagedescribed is bonded to the substrate of a device, that is, a so-calledmother board 9. If this BGA package is exposed to an environment havingvariations in temperature, stress is concentrated between the solderballs 8 and the drawn substrate 1 by the difference in the thermalexpansion coefficient between the mother board 9 and the drawn substrate1, as shown by arrows in FIG. 19, and may produce a crack. Finally, asshown in FIG. 20, a solder ball 8 may become completely separated fromthe drawn substrate 1.

This stress is generally concentrated on the corner of the solder ball8. Also, the stress increases from the center of the BGA package to theouter side because of the geometric moment of inertia. If the solderball 8 is separated from the substrate 1 in this manner, there ispresented a problem in that electric conduction is interrupted.

Also, in order to solve this problem, making the substrate of the BGApackage side thin or soft has been tried, but various problems have beenpresented: that is, the substrate is apt to be warped or deformed; it isdifficult to draw the substrate; and when a semiconductor device ismounted on a mother board, solder balls are floated to bring faultyconnection between them.

In view of the problems described above, the present invention has beenmade, and it is the object of the present invention to provide asemiconductor device capable of ensuring adequate bonding strengthwithout applying excessive stress to the solder balls, and having a highdegree of reliability.

In order to solve the above problems, according to a first aspect of thepresent invention, there is provided a semiconductor device comprising asubstrate made of metal for the purposes of making an electric wiringcircuit and taking heat radiation into account, in which the substratehas recessed portions on one surface opposite to the other surface towhich solder balls are bonded.

The recessed portions may be gradually deeper from the center to theouter side. Also, in the above semiconductor device, the recessedportions may be formed in the regions on the diagonals of the substrate.Also, in the above semiconductor substrate, the recessed portions may beformed like steps on the whole surface of the substrate such that theyare gradually deeper from the center to the outer side.

Further, in accordance with the second aspect of the present invention,there is provided a semiconductor device comprising a substrate made ofmetal for the purposes of making an electric wiring circuit and takingheat radiation into account, in which the substrate is made thin at theportion where solder balls are bonded and in which resin is applied tothe thin portion of the substrate.

In the above semiconductor device, the thin portion of the substrate maybe recessed. Also, in the above semiconductor device, the recessedportions may be formed like steps on the whole surface of the substratesuch that they are gradually deeper from the center to the outer side.

According to the third aspect of the present invention, there isprovided a semiconductor device comprising a substrate made of metal forthe purposes of making an electric wiring circuit and taking heatradiation into account, in which a through hole is made in the center ofthe substrate and in which a heat radiation plate is bonded to thesubstrate.

Further, in accordance with the fourth aspect of the present invention,there is provided a semiconductor device comprising a substrate made ofmetal for the purposes of making an electric wiring circuit and takingheat radiation into account, in which a through hole is made in thecenter of the substrate and in which an IC chip is fixed in the throughhole and in which the reverse surface of the IC chip is exposed outside.

In this connection, in the above semiconductor device according to thefirst to fourth aspects of the present invention, the substrate may beshaped like steps or subjected to drawing.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features of the invention and the concomitantadvantages will be better understood and appreciated by persons skilledin the field to which the invention pertains in view of the followingdescription given in conjunction with the accompanying drawings whichillustrate preferred embodiments.

FIG. 1 is a plan view of a BGA package showing the first preferredembodiment in accordance with the present invention;

FIG. 2 is a cross sectional view taken on a line A—A in FIG. 1;

FIG. 3 is an enlarged cross sectional view of a portion A in FIG. 2;

FIG. 4 is a plan view of a BGA package showing the second preferredembodiment in accordance with the present invention;

FIGS. 5(a), 5(b), and 5(c) are cross sectional views showing the shapeof a recessed portion of the drawn substrate of a BGA package inaccordance with the second preferred embodiment of the presentinvention;

FIG. 6 is a plan view of a BGA package showing the third preferredembodiment in accordance with the present invention;

FIG. 7 is a plan view of a BGA package showing the fourth preferredembodiment in accordance with the present invention;

FIG. 8 is a cross sectional view taken on a line B—B in FIG. 7;

FIG. 9 is a cross sectional view of a BGA package showing the fifthpreferred embodiment in accordance with the present invention;

FIG. 10 is a cross sectional view of a BGA package showing the sixthpreferred embodiment in accordance with the present invention;

FIG. 11 is a cross sectional view of a BGA package showing the seventhpreferred embodiment in accordance with the present invention;

FIG. 12 is a plan view of a BGA package showing the eighth preferredembodiment in accordance with the present invention;

FIG. 13 is a cross sectional view taken on a line C—C in FIG. 12;

FIG. 14 is a plan view of a BGA package showing the ninth preferredembodiment in accordance with the present invention;

FIGS. 15(a) and 15(b) illustrate a manufacturing process in crosssectional views taken on a line D—D in FIG. 14;

FIG. 16 is a plan view of a conventional BGA package of cavity down typetaking heat radiation into account;

FIG. 17 is a cross sectional view taken on a line E—E in FIG. 16;

FIG. 18 is a cross sectional view taken on a line E—E in FIG. 16;

FIG. 19 is an enlarged cross sectional view of a portion B in FIG. 18;and

FIG. 20 is an illustration showing the separation of a solder ball,which is a problem with the conventional package.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The preferred embodiments in accordance with the present invention willbe hereinafter described in detail.

FIG. 1 is a plan view of a BGA package showing the first preferredembodiment in accordance with the present invention. FIG. 2 is a crosssectional view taken on a line A—A in FIG. 1. FIG. 3 is an enlargedcross sectional view of a portion A in FIG. 2.

As shown in these figures, a stepwise drawn substrate 1, which is madeof a copper plate or the like for the purposes of making an electricwiring circuit and taking heat radiation into account, has recessedportions 10 for relieving a stress on one surface opposite to the othersurface to which solder balls 8 are bonded. An IC chip 3 is bonded tothe drawn portion 1 a of the stepwise drawn substrate 1 via an adhesive2. The electrodes 4 of the IC chip 3 are electrically connected, orwire-bonded, to the electrodes 5 of the stepwise drawn substrate 1 withthin metal wires 6. Then, a sealing material 7 such as epoxy resin orthe like is applied thereto and solder balls 8 to be terminals arebonded like a grid to the surface 1 b of the substrate 1 by a heatingprocess.

As shown in FIG. 3, when the recessed portion 10 is viewed in crosssection, it is desirable that it is made right above the positioncorresponding to the corner of the solder ball 8.

Also, as methods for making the recessed portions, there are presentedetching using liquid, milling using a drill and the like.

According to the first preferred embodiment having the aboveconstitution, the stress generated by the difference in thermalexpansion coefficient between a semiconductor and a mother board can bediffused without being concentrated on the corners of the solder balls8.

Accordingly, it is possible to ensure boding strength without applyingan excessive stress to the solder balls 8 and to produce a BGA packagehaving a high degree of reliability.

Also, since the substrate can have sufficient thickness on the BGApackage side, it is possible to reduce the degree of warp anddeformation of the substrate and to manufacture the substrate or mountthe substrate on a mother board without problems.

Next, the second preferred embodiment in accordance with the presentinvention will be described. FIG. 4 is a plan view of a BGA packageshowing the second preferred embodiment in accordance with the presentinvention, and FIGS. 5(a), 5(b), and 5(c) are cross sectional viewsshowing the shape of a recessed portion of the drawn substrate of theBGA package. FIG. 5(a) to FIG. 5(c) are cross sectional views showingthe shapes of the recessed portions made in sequence on the substratefrom the outer side to the center. In this connection, like referencecharacters are attached to like parts in the first preferred embodimentand the description for the like parts will be omitted.

As shown in FIG. 4 and FIGS. 5(a)-5(c), the BGA package of thispreferred embodiment has recessed portions 11 c to 11 a, which aregradually deeper from the center of the substrate 1 to the outer side.In this case, a deepest recessed portion 11 a, a deeper recessed portion11 b and a deep recessed portion 11 c are formed according to themagnitude of the stress produced by the moment inertia of area, that is,the constitution of the recessed portions corresponds to the differencein stress produced by the magnitude of the geometric moment of inertia.

As described above, according to the second preferred embodiment, it ispossible to further reduce the degree of warp or deformation in additionto the effects produced by the first preferred embodiment.

Next, the third preferred embodiment in accordance with the presentinvention will be described. FIG. 6 is a plan view of a BGA packageshowing the third preferred embodiment in accordance with the presentinvention. In this connection, this preferred embodiment is the same asthe first preferred embodiment or the second preferred embodiment exceptfor the following point and the description for the same parts will beomitted.

As shown in FIG. 6, the recessed portions shown in the first preferredembodiment or the second preferred embodiment are formed only in theregions 12 on the diagonals of the stepwise drawn substrate 1.Therefore, the constitution of the recessed portions corresponds to adifference in stress produced by the geometric moment of inertia. Also,in addition to the effects produced by the first preferred embodimentand the second preferred embodiment, the present third preferredembodiment can produce an effect of easily making the recessed portionsbecause the regions where the recessed portions are formed are reduced.

Next, the fourth preferred embodiment in accordance with the presentinvention will be described. FIG. 7 is a plan view of a BGA packageshowing the fourth preferred embodiment in accordance with the presentinvention. FIG. 8 is a cross sectional view taken on a line B—B in FIG.7. In this respect, the fourth preferred embodiment is the same as thefirst preferred embodiment except for the following point and thedescription for the same parts will be omitted.

As shown in FIG. 8, a recessed portion 13 is formed on the whole surfaceof the stepwise drawn substrate 1. The depth of the recessed portion 13is made stepwise deeper from the inner side to the outer side. That is,the constitution of the recessed portion 13 corresponds to a differencein stress produced by the geometric moment of inertia. Thisconstitution, therefore, produces an effect of further relieving thestress in addition to the effects of the second preferred embodiment.

Next, the fifth preferred embodiment in accordance with the presentinvention will be described. FIG. 9 is a cross sectional view of a BGApackage showing the fifth preferred embodiment in accordance with thepresent invention.

As shown in FIG. 9, a stepwise drawn substrate 1 made of a copper plateor the like for the purposes of making an electric wiring circuit andtaking heat radiation into account is made thin at the substrate portion1 c to which solder balls 8 are bonded. A stress relieving resin 14 suchas epoxy resin or the like is uniformly applied to the portion exceptfor the drawn portion 1 a and an IC chip 3 is bonded to the drawnportion 1 a via an adhesive 2. The electrodes 4 of the IC chip 3 areelectrically connected, or wire-bonded to the electrodes 5 of the drawnsubstrate 1 with thin metal wires 6. Then, a sealing material 7 such asepoxy resin or the like is applied thereto and the solder balls 8 arebonded like a grid to the surface 1 b of the drawn substrate 1 by aheating process.

The thermal expansion coefficient of the BGA package is changed to benearly equal to the thermal expansion coefficient of the mother board byapplying the stress relieving resin 14 to the region of the solder balls8 in this manner.

As described above, according to the fifth preferred embodiment, it ispossible to ensure bonding strength and to constitute a package having ahigh degree of reliability without applying an excessive stress to thesolder balls 8.

Also, since the whole thickness of the package can be ensured, it ispossible to prevent the warp or deformation of the package and tomanufacture the substrate and to mount the device on the mother boardwithout any problem.

Next, the sixth preferred embodiment in accordance with the presentinvention will be described. FIG. 10 is a cross sectional view of a BGApackage showing the sixth preferred embodiment in accordance with thepresent invention. The sixth preferred embodiment is the same as thefifth preferred embodiment except for the following point and thedescription for the same parts will be omitted.

As shown in FIG. 10, when the package is viewed in cross section,recessed portions are made at the portions of the drawn substrate 1corresponding to the corners of the solder balls 8. The recessedportions are filled with epoxy resin or the like to make filled portions15.

According the sixth preferred embodiment having a constitution likethis, when temperature is varied, it is possible to diffuse stressproduced by a difference in the thermal expansion coefficients between asemiconductor and a mother board without being concentrated on thecorners of the solder balls 8 when temperature is varied and, further,to reduce the degree of warp or deformation.

Next, the seventh preferred embodiment in accordance with the presentinvention will be described. FIG. 11 is a cross sectional view of a BGApackage showing the seventh preferred embodiment in accordance with thepresent invention. The seventh preferred embodiment is the same as thefifth preferred embodiment except for the following point and thedescription for the same parts will be omitted.

As shown in FIG. 11, a recessed portion shaped like steps is made on thewhole surface of a package and is filled with epoxy resin or the like toform a filled portion 16. This constitution, therefore, can respond to achange in stress caused by a difference in the geometric moment ofinertia, and can produce an effect of easily manufacturing the drawnsubstrate 1 in addition to the effects of the sixth preferredembodiment.

Next, the eighth preferred embodiment in accordance with the presentinvention will be described. FIG. 12 is a plan view of a BGA packageshowing the eighth preferred embodiment in accordance with the presentinvention, and FIG. 13 is a cross sectional view taken on a line C—C inFIG. 12.

As shown in these figures, a through hole 17 is made in the center of astepwise drawn substrate 1 made of a copper plate or the like for thepurposes of making an electric wiring circuit and taking heat radiationinto account. An IC chip 3 is bonded to the drawn portion 1 a of thestepwise drawn substrate 1 via an adhesive 2. The IC chip 3 is bonded toa heat radiating plate 19 via resin 18 filled in the through hole 17 andhaving good heat radiation property. The electrodes 4 of the IC chip 3are electrically connected, or wire-bonded, to the electrodes 5 of thestepwise drawn substrate 1 with thin metal wires 6. Then, a sealingmaterial 7 such as epoxy resin or the like is applied thereto and solderballs 8 to be terminals are bonded like a grid to the surface 1 b of thestepwise drawn substrate 1 by a heating process.

According to the eighth preferred embodiment in which the through holeis made in a part (center) of the stepwise drawn substrate 1, it ispossible to reduce the degree of deformation caused by heat.

Therefore, it is possible to ensure bonding strength without applying anexcessive stress to the solder balls 8 and hence to produce a packagehaving a high degree of reliability, and further to improve heatradiation generated by the IC chip 3.

Next, the ninth preferred embodiment in accordance with the presentinvention will be described. FIG. 14 is a plan view of a BGA packageshowing the ninth preferred embodiment in accordance with the presentinvention. FIGS. 15(a) and 15(b) show a manufacturing process in crosssectional views taken on a line D—D in FIG. 14, and FIG. 15(a) shows afirst stage of the process and FIG. 15(b) shows a second stage of theprocess.

As shown in these figures, a through hole 20 is made in the center of astepwise drawn substrate 1 made of a copper plate for the purposes ofmaking an electric wiring circuit and taking heat radiation intoaccount. An IC chip 3 is fixed in the through hole 20. The electrodes 4of the IC chip 3 are electrically connected, or wire-bonded, to theelectrodes 5 of the stepwise drawn substrate 1 with thin metal wires 6.Then, a sealing material 7 such as epoxy resin or the like is appliedthereto and solder balls 8 to be terminals are bonded like a grid to thesurface 1 b of the stepwise drawn substrate 1 by a heating process.

As a method for fixing the IC chip 3 in the through hole 20, thefollowing procedure may be employed. As shown in FIG. 15(a), forexample, an adhesive tape 21 having heat resistance is previously placedon the through hole 20 and then the IC chip 3 is fixed on the tape 21.The electrodes 4 of the IC chip 3 are electrically connected, orwire-bonded, to the electrodes 5 of the stepwise drawn substrate 1 withthin metal wires 6. Then, a sealing material 7 such as epoxy resin orthe like is applied thereto and after the sealing material 7 solidifies,the tape 21 is removed as shown in FIG. 15(b).

Since a part of the drawn substrate is removed, the degree ofdeformation of the package caused by heat can be reduced. Therefore, itis possible to ensure bonding strength without applying excessive stressto the solder balls 8 and to produce a BGA package having a high degreeof reliability.

Also, since the reverse surface of the IC chip 3 is exposed outside, theBGA package is excellent in heat radiation. Further, the reverse surfaceof the IC chip is ground to ensure the thickness of the package in thedirection of thickness, that is, so-called back grinding is performed,but this back grinding process can be omitted to reduce the number ofmanufacturing processes. Also, the same manufacturing process as is usedin manufacturing a CIB (chip in board) can be used.

The present invention has the following other modifications. While therecessed portion is shaped like a rectangle in the first preferredembodiment, it is not intended to limit the present invention to thisshape. Also, the number of the steps or changes in depth is three in thesecond, fourth, and seventh preferred embodiments, but it is notintended to limit the number of the steps to three. Further, the regionshaving the recessed portions are shaped like ellipsoids in the thirdpreferred embodiment, but it is not intended to limit the shapes of theregions to an ellipsoid. Still further, it is not intended to limit theshape and the position of the through hole in the eighth and ninthpreferred embodiments to those described above.

In this connection, it is not intended to limit the present invention tothe preferred embodiments described above. On the contrary, the presentinvention can be further modified based on the spirit and scope of thepresent invention and it is intended to cover all alternatives,modifications, equivalents as may be included within the spirit andscope of the invention.

As described above in detail, according to the present invention, thefollowing effects can be produced: bonding strength can be ensuredwithout applying an excessive stress to the solder balls and asemiconductor device having a high degree of reliability can beproduced.

To be more specific, a stress produced by a difference in the thermalexpansion coefficients between a semiconductor and a mother board can bediffused without being concentrated on the corners of the solder ballswhen temperatures are varied.

Also, if the recessed portion is made deep at the position where thestress produced by the geometric moment of inertia is large and it ismade shallow at the position where the stress produced by the geometricmoment of inertia is small, the recessed portion can be correspond to adifference in the stress caused by the geometric moment of inertia.

Also, if the recessed portions are formed only in the regions on thediagonals of the stepwise drawn substrate, the constitution of therecessed portions corresponds to a difference in the stress produced bythe geometric moment of inertia. In this case, the recessed portions canbe easily made because the regions where the recessed portions areformed are reduced.

Also, if the recessed portion is made deep at the position where thestress produced by the geometric moment of inertia is large and it ismade shallow at the position where the stress produced by the geometricmoment of inertia is small, the recessed portions can correspond to adifference in the stress caused by the geometric moment of inertia. Inthis case, the degree of warp and deformation of the package can bereduced.

Further, if the stress relieving resin is applied to the region of thesolder balls, the thermal expansion coefficient of the BGA package ischanged to be nearly equal to the thermal expansion coefficient of themother board. Therefore, it is possible to ensure bonding strength andto constitute a package having a high degree of reliability withoutapplying an excessive stress to the solder balls. In this case, sincethe whole thickness of the package can be ensured, it is possible toprevent the warp or deformation of the package and to manufacture thesubstrate and to mount the device on the mother board without anyproblem.

Also, when the package is viewed in cross section, the recessed portionsare made at the portions of the drawn substrate corresponding to thecorners of the solder balls. The recessed portions are filled with epoxyresin or the like to make filled portions. Therefore, when temperaturesare varied, it is possible to diffuse the stress produced by adifference in the thermal expansion coefficients between thesemiconductor and the mother board without being concentrated on thecorners of the solder balls and further, to reduce the degree of warp ordeformation of the package.

Also, the recessed portion shaped like steps is made on the wholesurface of the package and is filled with epoxy resin or the like toform the filled portion. This constitution, therefore, can respond to achange in stress caused by the difference in the geometric moment ofinertia, and the drawn substrate can be easily manufactured.

Further, if the through hole is made in a part (center) of the stepwisedrawn substrate, it is possible to reduce the degree of deformationcaused by heat. Therefore, it is possible to ensure bonding strengthwithout applying excessive stress to the solder balls and hence toproduce the package having a high degree of reliability, and further toimprove heat radiation generated by the IC chip.

Still further, if a part of the drawn substrate is removed, the degreeof deformation of the package caused by heat can be reduced. Therefore,it is possible to ensure bonding strength without applying excessivestress to the solder balls 8 and to produce the BGA package having ahigh degree of reliability. In this case, since the reverse surface ofthe IC chip 3 is exposed outside, the BGA package is excellent in heatradiation. Further, the reverse surface of the IC chip is ground toensure the thickness of the package in the direction of thickness, thatis, so-called back grinding is performed, but this back grinding processcan be removed to reduce the number of manufacturing processes.

The entire disclosure of Japanese Patent Application No. 2000-152246,filed on May 24, 2000, including the specification, claims, drawings andsummary, is incorporated herein by reference in its entirety.

What is claimed is:
 1. A semiconductor device comprising: a substratethat comprises a metal member, said metal member having a hollow regionand a through hole provided at said hollow region, said metal memberadditionally having a rear surface; and a semiconductor chip mounted atsaid hollow region, said semiconductor chip having a rear surface,wherein said rear surface of said semiconductor chip is exposed at saidrear surface of said metal member through said through hole.
 2. Asemiconductor device according to claim 1, further comprising: a resinthat fills said through hole; and a heat sink plate at said rear surfaceof said substrate.
 3. A semiconductor device according to claim 1,wherein: said semiconductor chip is mounted inside said through hole. 4.The semiconductor device of claim 1, wherein the semiconductor chip islarger than the through hole.
 5. The semiconductor device of claim 1,wherein the hollow region is disposed in a central portion of thesubstrate, wherein the substrate additionally has a peripheral portionthat surrounds the central portion, wherein the peripheral portion has afront surface that lies substantially in a plane, and wherein thecentral portion of the substrate rises above the plane to provide thehollow region.
 6. The semiconductor device of claim 5, wherein thesemiconductor chip has a front surface that is oriented toward the planebut is disposed above the plane.
 7. The semiconductor device of claim 6,wherein the plane is a first plane, wherein the central portion of thesubstrate has a front surface with an annular shoulder region that liessubstantially in a second plane that is disposed above the first plane,and further comprising electrodes disposed at the shoulder region, andwires extending from the semiconductor chip to the electrodes.
 8. Thesemiconductor device of claim 7, wherein the front surface of thecentral portion of the substrate has a summit region that liessubstantially in a third plane that is disposed above the second plane,the through hole being disposed in the summit region.
 9. Thesemiconductor device of claim 8, wherein the rear surface of thesemiconductor chip is spaced apart from the first plane by a distancethat is no larger than the distance between the first and third planes.10. A semiconductor device, comprising: a semiconductor chip; and asubstrate with front and rear surfaces, the substrate having a centralportion with a through hole and having a peripheral portion thatsurrounds the central portion, the semiconductor chip being mounted onthe central portion of the substrate and aligned with the through hole,the front surface of the substrate lying substantially in a plane in theperipheral portion and rising above the plane in the central portion toprovide the substrate with a hollow region, wherein the substratecomprises a substantially rectangular metal member, part of which isdisposed in the central portion of the substrate and part of which isdisposed in the peripheral portion.
 11. The semiconductor device ofclaim 10, wherein the semiconductor chip has a front surface that isoriented toward the plane but is disposed above the plane.
 12. Thesemiconductor device of claim 10, wherein the plane is a first plane,wherein the central portion of the substrate of the substrate has anannular shoulder region in the central portion, wherein the annularshoulder region lies substantially in a second plane that is disposedabove the first plane, and further comprising electrodes disposed at theshoulder region, and wires extending from the semiconductor chip to theelectrodes.
 13. The semiconductor device of claim 12, wherein the frontsurface of the substrate has a summit region in the central region,wherein the summit region lies substantially in a third plane that isdisposed above the second plane, and wherein the through hole isdisposed in the summit region.
 14. The semiconductor device of claim 13,wherein the semiconductor chip has a rear surface that faces the throughhole, and wherein the rear surface of the semiconductor chip is spacedapart from the first plane by a distance that is no larger than thedistance between the first and third planes.
 15. The semiconductordevice of claim 10, wherein the semiconductor chip has a rear surfacethat faces the through hole, and further comprising resin that fills thethrough hole, and a heat sink plate at the rear surface of thesubstrate.
 16. The semiconductor device of claim 10, wherein thesemiconductor chip is mounted inside the through hole.